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CY7C1061G18-15BV1XIES - 16-Mbit (1 M words 16 bit) Static RAM with Error-Correcting Code (ECC)

CY7C1061G18-15BV1XIES_8326922.PDF Datasheet


 Full text search : 16-Mbit (1 M words 16 bit) Static RAM with Error-Correcting Code (ECC)


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CY62167G18-55BVXIES CY62167G30-45BVXIES CY62167GE3 16-Mbit (1 M words 16 bit / 2 M words 8 bit) Static RAM with Error-Correcting Code (ECC)
Cypress
MSM53V1655F 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM
OKI electronic componets
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL    4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
IS42S16400 IS42S8800 IS42S8800L IS42S16400L 2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
ICSI[Integrated Circuit Solution Inc]
IS42S16100 IS42S16100-7T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
ICS
GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C 1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
LG Semiconductor
GM76C8128CL-55 GM76C8128CLLI-55 GM76C8128CLL-85 GM 131,072 words x 8 bit CMOS static RAM, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 85ns
131,072 words x 8 bit CMOS static RAM, 70ns
LG Semiconductor
IS42S16100A1-10T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
Integrated Silicon Solution, Inc.
IS42VS16100C1-10TI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
Integrated Silicon Solution, Inc.
MSM538052E MSM538052E-XXGS-K MSM538052E-XXRS MSM53 524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM, 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
OKI electronic componets
LC338128M LC338128P LC338128PL LC338128M-80 LC3381 1 MEG (131072 words x 8 bit) pseudo-SRAM
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SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
 
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